1. Material:

High saturation electron velocity (2 times that of silicon material)

High breakdown voltage (10 times that of silicon)

Wide band gap (3 times that of silicon)

High melting point (2 times that of silicon)

2. Components:

Low conductivity

High withstand voltage

High temperature resistance

4/6-inch n-type SiC Seed.

4/6-inch n-type SiC Ingot.

4/6-inch n-type SiC substrate.

4/6-inch semi-insulating SiC Seed.

4/6-inch semi-insulating SiC Ingot.

4/6-inch semi-insulating SiC substrate.

6-inch SiC Substrate

150mm n-type SiC Wafers Specs

150mm Semi-insulating SiC Wafers Specs