Semiconductor products

Semiconductor devices

SiC Devices

It has the advantages of high saturated electron speed (2 times that of silicon), high breakdown voltage (10 times of silicon), wide band gap (3 times of silicon), and high melting point (2 times of silicon). It can be applied to electric vehicles and

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GaN Devices

Silicon carbide has the advantages of high saturated electron velocity (2 times that of silicon materials), high breakdown voltage (10 times of silicon), wide band gap (3 times of silicon), and high melting point (2 times of silicon). It can be used i