Essential performance advantage

    • Gallium nitride can provide higher efficiency, the lowest power conversion loss in any voltage range

    • Gallium nitride can work at higher frequencies

Relative cost advantage

    • Gallium nitride devices (on silicon substrates) are cheaper than silicon carbide

    • Gallium nitride provides lower system cost than silicon

    • Gallium nitride roadmap will achieve cost parity with silicon at the device level

• High Breakdown Voltage : Because GaN has extremely high capability, GaN material has extremely high breakdown capability, 
making this GaN work at a faster voltage than other semiconductors. ,
 The kinetic energy of the electronic equipment in the semiconductor breaks the chemical bond ("ionization" or "voltage breakdown" during the whole process. 
If the performance dissociation can be controlled, the equipment cannot be reduced. 
Because GaN devices can operate at higher voltages, so Can be used in higher power applications.

• High electron speed: The speed on GaN is very fast (the speed of electrons at high currents). Combined with a large charging capacity, this means that GaN can provide faster current speeds. The RF power output is the product of the voltage and current swings, so the increased voltage and current power can generate RF power in actual size production.

• Better thermal performance: GaN devices on silicon carbide have excellent heat dissipation performance. Compared with "cold" devices, they are less reliable devices.

• Active electronic sensor (AESA) radar and electronic warfare (EW) system:

Key applications of GaN on SiC (or possibly) diamond and MMIC materials. There is no other technology that can provide the power density and other related advantages of GaN-on-SiC.

• High-bandwidth 4 systems working above GHz:

Apart from GaN, no other can provide the performance required by these systems. From the very small terminal aperture (VSAT) of satellite communications to higher frequency microwave technology, GaN is (or will) be the best (and only) choice. .

• Some low noise amplifiers (LNA):

Although GaN and GaAs have comparable noise performance, GaN can handle more serious signals, but degradation or failure will occur. When high-frequency signals must be processed, GaN has unique advantages.

• Large radio frequency radio frequency and other control components:

The high voltage and current handling capabilities of GaN are more suitable than GaAs-based MMC switches. Moreover, they can also effectively operate on wide breakdown MICs.

Basic GaN HEMT  Device Structure